INFLUENCE OF THE IRRADIATION WITH HIGH-ENERGY Xe IONS ON THE STRUCTURE AND PHOTOLUMINESCENCE OF SILICON AND SILICA WITH InAs NANOCLUSTERS

The authors have given results of investigations into the structural and optical properties of InAs nanoclusters formed by the ion-implantation method in silicon and silica matrices. The infl uence of the heat treatment at a temperature of 900^o C and of the irradiation with Xe ions with an energy of 167 MeV and a fl uence of 3·10¹⁴ cm ^–2 on the structure and photoluminescence of the formed systems has been found. In the case of the system ″InAs in SiO²″ the irradiation with Xe ions leads to an enhancement of the intensity and a broadening of the luminescence spectrum in the visible spectral region (550–750 nm). The ordering of the nanoclusters and their stretching along the path of the Xe ions in the SiO₂ matrix has been found.
   
Author:  F. F. Komarov, O. V. Milchanin, I. N. Parkhomenko, L. A. Vlasukova, N. S. Nechaev, V. A. Skuratov, and V. N. Yuvchenk
Keywords:  ion implantation, InAs nanoclusters, high-speed heavy ions, tracks, heat treatment, crystalline silicon, silica, Rutherford backscattering, transmission electron microscopy, photoluminescence
Page:  508